direct radiative recombination

direct radiative recombination
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English-russian dictionary of physics. 2013.

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  • Non-radiative recombination — is a process in phosphors and semiconductors, whereby charge carriers recombine without releasing photons. A phonon is released instead. Non radiative recombination in optoelectronics and phosphors is an unwanted process, lowering the light… …   Wikipedia

  • Direct and indirect band gaps — In semiconductor physics, the band gap of a semiconductor is always one of two types, a direct band gap or an indirect band gap. The band gap is called direct if the momentum of electrons and holes is the same in both the conduction band and the… …   Wikipedia

  • Direct bandgap — In semiconductor physics, a direct bandgap means that the minimum energy of the conduction band lies directly above the maximum energy of the valence band in momentum space. In a direct bandgap semiconductor, electrons at the conduction band… …   Wikipedia

  • Carrier generation and recombination — In the solid state physics of semiconductors, carrier generation and recombination are processes by which mobile electrons and electron holes are created and eliminated. Carrier generation and recombination processes are fundamental to the… …   Wikipedia

  • Indirect bandgap — In semiconductor physics, an indirect bandgap is a bandgap in which the minimum energy in the conduction band is shifted by a k vector relative to the valence band. The k vector difference represents a difference in momentum.Semiconductors that… …   Wikipedia

  • ionosphere and magnetosphere — ▪ atmospheric science Introduction       regions of Earth s (Earth) atmosphere in which the number of electrically charged particles ions (ion) and electrons (electron) are large enough to affect the propagation of radio waves (electromagnetic… …   Universalium

  • Journal of Luminescence — Infobox Journal discipline = Physics abbreviation = JOL website = http://www.sciencedirect.com/science/journal/00222313 publisher = Elsevier country = ... history = 1975 to present ISSN = 0022 2313 Journal of Luminescence (ISSN 0953 4075) is a… …   Wikipedia

  • nanotechnology — /nan euh tek nol euh jee, nay neuh /, n. any technology on the scale of nanometers. [1987] * * * Manipulation of atoms, molecules, and materials to form structures on the scale of nanometres (billionths of a metre). These nanostructures typically …   Universalium

  • Indium gallium nitride — (InGaN, IndiumxGallium1 xNitrogen) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its band gap can be tuned by varying the amount of… …   Wikipedia

  • luminescence — luminescent, adj. /looh meuh nes euhns/, n. 1. the emission of light not caused by incandescence and occurring at a temperature below that of incandescent bodies. 2. the light produced by such an emission. [1885 90; < L lumin (see LUMEN) +… …   Universalium

  • cosmos — /koz meuhs, mohs/, n., pl. cosmos, cosmoses for 2, 4. 1. the world or universe regarded as an orderly, harmonious system. 2. a complete, orderly, harmonious system. 3. order; harmony. 4. any composite plant of the genus Cosmos, of tropical… …   Universalium


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